Memories (BQ2201SN)

Features:
Fast Read Access Time 150 ns
Automatic Page Write Operation
Internal Address and Data Latches for 64 Bytes
Fast Write Cycle Times
Page Write Cycle Time: 10 ms Maximum
1 to 64-byte Page Write Operation
Low Power Dissipation
40 mA Active Current
100 μ A CMOS Standby Current
Hardware and Software Data Protection

DATA Polling and Toggle Bit for End of Write Detection
High Reliability CMOS Technology
Endurance: 100, 000 Cycles
Data Retention: 10 Years
Single 5V ± 10% Supply
CMOS and TTL Compatible Inputs and Outputs
JEDEC Approved Byte-wide Pinout
Commercial and Industrial Temperature Ranges